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BDX34, BDX34A, BDX34B, BDX34C, BDX34D Transistor de puissance PNP darlington
Copyright (c) 1997, Power Innovations Limited, UK AUGUST 1993 - REVISED MARCH 1997
q
Transistor complementaire concut pour etre utilise avec BDX33, BDX33A, BDX33B, BDX33C and BDX33D 70 W a 25C Temperature du boitier
B
Boitier TO-220 Vue de dessus
q q q
1 2 3
10 A Courant continu de collecteur Minimum hFE of 750 at 3 V, 3 A
C E
La broche 2 est en contact avec le boitier
MDTRACA
Valeurs limites absolues a une temperateur boitier de 25C
Parametres BDX34 BDX34A Tension Collector-base (I E = 0) BDX34B BDX34C BDX34D BDX34 BDX34A Tension Collector-emetteur (I B = 0) BDX34B BDX34C BDX34D Tension Emetteur-base Courant de collecteur en continu Courant de base en continu Continuous device dissipation at (or below) 25C case temperature (see Note 1) Continuous device dissipation at (or below) 25C free air temperature (see Note 2) Temperature de fonctionnement a l'air libre Tempetature de stockage Temperature de fonctionnement a l'air libre NOTES: 1. Derate linearly to 150C case temperature at the rate of 0.56 W/C. 2. Derate linearly to 150C free air temperature at the rate of 16 mW/C. T VEBO IC IB Ptot Ptot TJ
stg
Symbole
Valeur -45 -60
Unite
VCBO
-80 -100 -120 -45 -60
V
VCEO
-80 -100 -120 -5 -10 -0.3 70 2 -65 to +150 -65 to +150 -65 to +150
V
V A A W W C C C
TA
BDX34, BDX34A, BDX34B, BDX34C, BDX34D Transistor de puissance PNP darlington
AUGUST 1993 - REVISED MARCH 1997
Caracteristiques electriques avec le boitier a 25C (sauf indication)
Parametres Conditions BDX34 V (BR)CEO Tension de claquage Collecteur-emetteur BDX34A IC = -100 mA IB = 0 (Voir Note 3) BDX34B BDX34C BDX34D VCE = -30 V V CE = -30 V V CE = -40 V V CE = -50 V ICEO Courant de bloquage Collecteur-emetteur V CE = -60 V V CE = -30 V V CE = -30 V V CE = -40 V V CE = -50 V V CE = -60 V VCB = -45 V V CB = -60 V V CB = -80 V V CB = -100 V ICBO Courant de bloquage au collecteur V CB = -120 V V CB = -45 V V CB = -60 V V CB = -80 V V CB = -100 V V CB = -120 V IEBO Courant de bloquage a l'emetteur VEB = VCE = hFE Gain en courant V CE = V CE = V CE = V CE = VCE = VBE(on) Tension Base-emitter V CE = V CE = V CE = V CE = IB = VCE(sat) Tension de saturation Collecteur-emetteur IB = IB = IB = IB = VEC Courant direct dans la diode parallele IE = -5 V -3 V -3 V -3 V -3 V -3 V -3 V -3 V -3 V -3 V -3 V -8 mA -8 mA -6 mA -6 mA -6 mA -8 A IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IB = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IE = 0 IC = 0 IC = -4 A IC = -4 A IC = -3 A IC = -3 A IC = -3 A IC = -4 A IC = -4 A IC = -3 A IC = -3 A IC = -3 A IC = -4 A IC = -4 A IC = -3 A IC = -3 A IC = -3 A IB = 0 (Voir Notes 3 et 4) (Voir Notes 3 et 4) (Voir Notes 3 et 4) BDX34 BDX34A BDX34B BDX34C BDX34D BDX34 BDX34A BDX34B BDX34C BDX34D BDX34 BDX34A BDX34B BDX34C BDX34D 750 750 750 750 750 -2.5 -2.5 -2.5 -2.5 -2.5 -2.5 -2.5 -2.5 -2.5 -2.5 -4 V V V TC = 100C TC = 100C TC = 100C TC = 100C TC = 100C TC = 100C TC = 100C TC = 100C TC = 100C TC = 100C BDX34 BDX34A BDX34B BDX34C BDX34D BDX34 BDX34A BDX34B BDX34C BDX34D BDX34 BDX34A BDX34B BDX34C BDX34D BDX34 BDX34A BDX34B BDX34C BDX34D MIN -45 -60 -80 -100 -120 -0.5 -0.5 -0.5 -0.5 -0.5 -10 -10 -10 -10 -10 -1 -1 -1 -1 -1 -5 -5 -5 -5 -5 -10 mA mA mA V TYP MAX UNITE
NOTES: 3. Ces parametres sont obtenus en utilisant des impulsions, t p = 300 s, rapport cyclique 2%. 4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
thermal characteristics
PARAMETER RJC RJA Junction to case thermal resistance Junction to free air thermal resistance MIN TYP MAX 1.78 62.5 UNIT C/W C/W
resistive-load-switching characteristics at 25C case temperature
PARAMETER ton toff
TEST CONDITIONS IC = -3 A VBE(off) = 3.5 V IB(on) = -12 mA RL = 10
MIN IB(off) = 12 mA tp = 20 s, dc 2%
TYP 1 5
MAX
UNIT s s
Turn-on time Turn-off time
Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
PRODUCT
INFORMATION
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BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN vs COLLECTOR CURRENT
VCE(sat) - Collector-Emitter Saturation Voltage - V 50000
TCS135AF
COLLECTOR-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
-2*0 tp = 300 s, duty cycle < 2% IB = IC / 100
TCS135AH
hFE - Typical DC Current Gain
TC = -40C TC = 25C TC = 100C 10000
-1*5
1000
-1*0
VCE = -3 V t p = 300 s, duty cycle < 2% 100 -0*5 -1*0 IC - Collector Current - A -10
TC = -40C TC = 25C TC = 100C -0*5 -0*5 -1*0 IC - Collector Current - A -10
Figure 1.
Figure 2.
BASE-EMITTER SATURATION VOLTAGE vs COLLECTOR CURRENT
-3*0 VBE(sat) - Base-Emitter Saturation Voltage - V TC = -40C TC = 25C TC = 100C
TCS135AJ
-2*5
-2*0
-1*5
-1*0 IB = IC / 100 tp = 300 s, duty cycle < 2% -0*5 -0*5 -1*0 IC - Collector Current - A -10
Figure 3.
PRODUCT
INFORMATION
4
BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
THERMAL INFORMATION
MAXIMUM POWER DISSIPATION vs CASE TEMPERATURE
80 Ptot - Maximum Power Dissipation - W 70 60 50 40 30 20 10 0 0 25 50 75 100 125 150 TC - Case Temperature - C
TIS130AB
Figure 4.
PRODUCT
INFORMATION
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BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
MECHANICAL DATA TO-220 3-pin plastic flange-mount package
This single-in-line package consists of a circuit mounted on a lead frame and encapsulated within a plastic compound. The compound will withstand soldering temperature with no deformation, and circuit performance characteristics will remain stable when operated in high humidity conditions. Leads require no additional cleaning or processing when used in soldered assembly.
TO220 4,70 4,20
o
3,96 3,71
10,4 10,0
2,95 2,54 6,6 6,0 15,90 14,55
1,32 1,23
see Note B
see Note C
6,1 3,5
0,97 0,61 1 2 3
1,70 1,07
14,1 12,7
2,74 2,34 5,28 4,88 2,90 2,40
0,64 0,41
VERSION 1
VERSION 2
ALL LINEAR DIMENSIONS IN MILLIMETERS NOTES: A. The centre pin is in electrical contact with the mounting tab. B. Mounting tab corner profile according to package version. C. Typical fixing hole centre stand off height according to package version. Version 1, 18.0 mm. Version 2, 17.6 mm. MDXXBE
PRODUCT
INFORMATION
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BDX34, BDX34A, BDX34B, BDX34C, BDX34D PNP SILICON POWER DARLINGTONS
AUGUST 1993 - REVISED MARCH 1997
IMPORTANT NOTICE
Power Innovations Limited (PI) reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to verify, before placing orders, that the information being relied on is current. PI warrants performance of its semiconductor products to the specifications applicable at the time of sale in accordance with PI's standard warranty. Testing and other quality control techniques are utilized to the extent PI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily performed, except as mandated by government requirements. PI accepts no liability for applications assistance, customer product design, software performance, or infringement of patents or services described herein. Nor is any license, either express or implied, granted under any patent right, copyright, design right, or other intellectual property right of PI covering or relating to any combination, machine, or process in which such semiconductor products or services might be or are used. PI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, INTENDED, AUTHORIZED, OR WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT APPLICATIONS, DEVICES OR SYSTEMS.
Copyright (c) 1997, Power Innovations Limited
PRODUCT
INFORMATION
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